Ferroelectric-Gate Field Effect Transistor Memories

dc.contributor.editor	Park, Byung-Eun
dc.date.accessioned	2019-07-23T06:35:40Z
dc.date.accessioned	2023-07-22T10:20:34Z
dc.date.available	2019-07-23T06:35:40Z
dc.date.available	2023-07-22T10:20:34Z
dc.date.issued	2016
dc.identifier.isbn	978-94-024-0841-6
dc.identifier.uri	http://10.215.13.25/handle/123456789/76211
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	Ferroelectric-Gate	en_US
dc.title	Ferroelectric-Gate Field Effect Transistor Memories	en_US
dc.type	Book	en_US